收藏本站
?
Semiconductor Components Industries, LLC, 2005
October, 2005 ? Rev. 5
1
Publication Order Number:
DAP222/D
DAP222, DAP202U
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC?75/SOT?416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC?70/SOT?323 package.
Features
?
Fast trr
?
Low CD
?
Pb?Free Packages are Available
MAXIMUM RATINGS (TA
= 25
°C)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
80
Vdc
Peak Reverse Voltage
VRM
80
Vdc
Forward Current
IF
100
mAdc
Peak Forward Current
IFM
300
mAdc
Peak Forward Surge Current
IFSM(1)
2.0
Adc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
?55 ~ +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
Device Package Shipping?
ORDERING INFORMATION
DAP222 SC?75 3000 / Tape & Reel
DAP202U SC?70 3000 / Tape & Reel
SC?75
CASE 463
STYLE 4
MARKING
DIAGRAMS
1
2
3
1
2
3
SC?70
CASE 419
DAP222T1 SC?75 3000 / Tape & Reel
DAP222T1G SC?75
(Pb?Free)
3000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ANODE
3
12
CATHODE
DAP202UG SC?70
(Pb?Free)
3000 / Tape & Reel
P9 M
1
P9, NB = Device Codes
M = Date Code*
= Pb?Free Package
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
DAP222G SC?75
(Pb?Free)
3000 / Tape & Reel
NB M
(Note: Microdot may be in either location)
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DAP222MT2L DIODE SWITCH 100MA 80V VMD3
DAP222TL DIODE SWITCH 80V 100MA SOT-416
DAP236UT106 DIODE SWITCH BAND 35V 3EMD TR
DC03-11EWA DISPLAY 627NM HE RED 2DIG 3" TH
DC03-11GWA DISPLAY 565NM GRN 2DIG 3" TH
DC03-11SRWA DISPLAY 660NM RED 2DIG 3" TH
DC03-11YWA DISPLAY 590NM YLW 2DIG 3" TH
DC04-11EWA DISPLAY 627NM HE RED 2DIG 4" TH
相关代理商/技术参数
DAP222M 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:Ultra high speed switching
DAP222M_11 制造商:ROHM 制造商全称:Rohm 功能描述:Switching Diode
DAP222M3T5G 功能描述:二极管 - 通用，功率，开关 DUAL COMM ANODE SWCH RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
DAP222MT2L 功能描述:二极管 - 通用，功率，开关 SWITCH 100MA 80V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
DAP222T1 功能描述:二极管 - 通用，功率，开关 80V 100mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
DAP222T1G 功能描述:二极管 - 通用，功率，开关 80V 100mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
DAP222TL 功能描述:二极管 - 通用，功率，开关 SWITCH 80V 100MA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
DAP222WM 制造商:ROHM 制造商全称:Rohm 功能描述:Switching Diode